Seventeen new power MOSFETs that offer exceptionally low on-resistance values down to 3.7 mΩ in the compact PowerPAK? 12128 package were released today by Vishay Intertechnology, Inc. (NYSE: VSH).
These TrenchFET Gen II devices deliver significant space savings with dimensions of just 3.3 mm by 3.3 mm by 1 mm ? just 1/3 the size of the SO8 package ? as well as low thermal resistance of <2 °C/W for an eightfold improvement when compared with SO8 devices.
Intended for synchronous rectification, synchronous buck, and intermediate switching applications in point of load (POL) converters and high-density dc-to-dc converters used in datacom systems, the new power MOSFETs enable designers to reduce board space dramatically and/or increase functionality without sacrificing performance. With their excellent electrical performance, the power MOSFETs introduced today serve as a viable replacement for SO-8 devices in many applications.
The 12-V through 40-V single n-channel devices released today feature on-resistance values ranging from 3.7 mΩ to 10 mΩ at a 4.5-V gate drive, and they include the 12-V Si7104DN, 20-V Si7106DN, Si7108DN, and Si7110DN; 30-V Si7112DN and Si7114DN; and 40-V Si7116DN.
Dual n-channel devices released today offer on-resistance values down to 36 mΩ and include the 30-V Si7212DN and Si7214DN, 40-V Si7222DN, and 60-V Si7220DN.
Also being released today in the PowerPAK 1212-8 package are the single-channel 60V Si7120DN, 75-V Si7812DN, 150V Si7818DN, 220-V Si7302DN, and 250-V Si7802DN. These devices feature on-resistance values ranging from 135 mΩ to 435 mΩ at a 10-V gate drive. The 200-V Si7820DN was previously released.
Samples and production quantities of the new power MOSFETs in the PowerPAK 1212-8 package are available now, with lead times of 12 weeks for larger orders.