Vishay Intertechnology, Inc.（NYSE 股市代号：VSH） 宣布推出业界首款采用 MICRO FOOT® 芯片级封装的 TrenchFET® 功率 MOSFET，该器件具有背面绝缘的特点。
该 Si8422DB针对手机、PDA、数码相机、MP3 播放器及智能电话等便携设备中的功率放大器、电池和负载切换进行了优化。该器件 2-mil背面涂层可实现对 MICRO FOOT 封装的顶部绝缘，以防与便携器件中移动部件暂时接触而产生的电路短路。
此绝缘设计令该器件可用于具有非常严格的高度要求的应用，从而设计人员可灵活放置 MOSFET，屏蔽、按钮或触摸屏等其他零部件可直接放置在 MOSFET 的上方，这在压低上述部件空间时将进一步压缩产品的高度。此设计灵活性还可减少寄生效应，由于无需路由至 PCB 上的区域及更少的高度限制，电路布局可更好地优化。
20V n 通道Si8422DB具有 1.55mm × 1.55mm 的超小尺寸及 0.64mm 的超薄厚度。该器件提供了1.8V VGS时 0.043 Ω 至 4.5V VGS时 0.037Ω 的低导通电阻范围，且最大栅源电压为 ±8 V。
Vishay Releases Industry’s First TrenchFET® Power MOSFET in MICRO FOOT® Chipscale Package to Feature Backside Insulation
Vishay Intertechnology, Inc. (NYSE: VSH) today released the industry’s first TrenchFET® power MOSFET in the chipscale MICRO FOOT® package to feature backside insulation.
The Si8422DB is optimized for power amplifier, battery, and load switching in portable devices such as cell phones, PDAs, digital cameras, MP3 players, and smart phones. The 2-mil backside coating of the device insulates the top of the MICRO FOOT package to electrical shorts from being created by temporary contact with moving parts in portable devices.
This insulation allows the device to be used in applications with very thin height requirements, providing designers with the flexibility to place the MOSFET where other items may be directly above it, such as shielding, buttons, or touch screens, which further compress the product height when depressed. This layout flexibility also translates into reduced parasitics, as the traces can be better optimized by not having to be routed to areas on the PCB with less height restrictions.
The 20-V n-channel Si8422DB features an ultra-compact 1.55-mm by 1.55-mm footprint with a slim 0.64-mm profile. The device offers a low on-resistance range from 0.043 Ω at 1.8-V VGS to 0.037 at 4.5-V VGS, with a maximum gate-source voltage of ±8 V.